𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Phosphorus concentration in hydrogenated amorphous silicon using ion-implanted references


Book ID
108390261
Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
149 KB
Volume
31
Category
Article
ISSN
0042-207X

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Solid phase epitaxial regrowth of amorph
✍ S. Ruffell; I.V. Mitchell; P.J. Simpson πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 210 KB

Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm Γ€2 up to 1e16 cm Γ€2 , the associa