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Phosphorus and boron diffusion in silicon under equilibrium conditions

✍ Scribed by Christensen, J. S.; Radamson, H. H.; Kuznetsov, A. Yu.; Svensson, B. G.


Book ID
121689885
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
219 KB
Volume
82
Category
Article
ISSN
0003-6951

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## Abstract We studied the simultaneous phosphorus and boron diffusion gettering (BDG) of iron in silicon by physical modeling. We present improvements to the previously used models for BDG and phosphorus diffusion gettering (PDG). We show that the improved model is suitable for analyzing the gette