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Concentration-dependent diffusion of boron and phosphorus in silicon

✍ Scribed by Chang, J.J.


Book ID
114588678
Publisher
IEEE
Year
1963
Tongue
English
Weight
328 KB
Volume
10
Category
Article
ISSN
0018-9383

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## Abstract We studied the simultaneous phosphorus and boron diffusion gettering (BDG) of iron in silicon by physical modeling. We present improvements to the previously used models for BDG and phosphorus diffusion gettering (PDG). We show that the improved model is suitable for analyzing the gette