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Phosphorous–vacancy–oxygen defects in silicon

✍ Scribed by Wang, H.; Chroneos, A.; Hall, D.; Sgourou, E. N.; Schwingenschlögl, U.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electronic structure of oxygen-vacancy d

✍ V. A. Gubanov; A. F. Zatsepin; V. S. Kortov; S. P. Freidman; G. B. Cherlov 📂 Article 📅 1988 🏛 Springer US 🌐 English ⚖ 421 KB

Oxygen-related vacancy-type defects in i

✍ Pi, X D; Burrows, C P; Coleman, P G; Gwilliam, R M; Sealy, B J 📂 Article 📅 2003 🏛 Institute of Physics 🌐 English ⚖ 206 KB

First-principles study of the phosphorou

✍ Virkkunen, R.; Nieminen, R.M. 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 544 KB

Structure of tin–vacancy defects in sili

✍ M Kaukonen; R Jones; S Öberg; P.R Briddon 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 142 KB

Oxygen vacancy related defects in batio

✍ Scharfschwerdt, R.; Schirmer, O. F.; Krösz, H.; Kool, Th. W. 📂 Article 📅 1996 🏛 Taylor and Francis Group 🌐 English ⚖ 252 KB

Semiempirical calculations of point defe

✍ E.M. Dianov; V.O. Sokolov; V.B. Sulimov 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 920 KB