Phosphane copper(I) complexes as CVD precursors

✍ Scribed by Nina Roth; Alexander Jakob; Thomas Waechtler; Stefan E. Schulz; Thomas Gessner; Heinrich Lang

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 1007 KB
• Volume: 201
• Category: Article
• ISSN: 0257-8972
• DOI: 10.1016/j.surfcoat.2007.05.004

✦ Synopsis

The synthesis of a series of phosphane copper(I) complexes of structural type [(R 3 P) m CuX] (R = n Bu, Et, OMe; m = 2, 3; X = acetylacetonate, 4iminopent-2-en-2-olate, picolinate, 2-(pyridin-2-yl)acetate) is presented. Possible decomposition mechanisms for these metal-organic complexes will be discussed. The use of [((MeO) 3 P) 2 Cu(acac)] (4a) and [(Et 3 P) 3 Cu(acac)] (4b) as CVD precursors in the deposition of copper onto TiNcoated oxidised silicon substrates using a low-pressure horizontal hot-wall CVD reactor at 250 °C (4a) or 350 °C (4b) deposition temperature is presented as well. Depending on the evaporation temperature and the heating rate, precursor 4a produced wire-like copper structures (particle size 650 nm, layer thickness 8.6-11.2 μm) or not completely closed layers with particle sizes of 600-1500 nm and a layer thickness of 1.1-1.4 μm. Experiments with precursor 4b resulted in the formation of non-conformal layers (crystal size 700-1100 nm, layer thickness 1.4-1.8 μm).