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Phonon confinement effect of silicon nanowires synthesized by laser ablation

โœ Scribed by Fukata, N.; Oshima, T.; Murakami, K.; Kizuka, T.; Tsurui, T.; Ito, S.


Book ID
120301635
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
609 KB
Volume
86
Category
Article
ISSN
0003-6951

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Hydrogen passivation of P donors and def
โœ N. Fukata; S. Matsushita; T. Tsurui; J. Chen; T. Sekiguchi; N. Uchida; K. Muraka ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 303 KB

Hydrogen passivation of phosphorus (P) donors and defects in P-doped silicon nanowires (SiNWs) were investigated by electron spin resonance (ESR) at 4.2 K. P doping was performed during the synthesis of SiNWs by laser ablation. Phosphorus doping into substitutional sites of crystalline Si in SiNWs w