Impurity doping in silicon nanowires synthesized by laser ablation
โ Scribed by N. Fukata; S. Matsushita; N. Okada; J. Chen; T. Sekiguchi; N. Uchida; K. Murakami
- Publisher
- Springer
- Year
- 2008
- Tongue
- English
- Weight
- 449 KB
- Volume
- 93
- Category
- Article
- ISSN
- 1432-0630
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Hydrogen passivation of phosphorus (P) donors and defects in P-doped silicon nanowires (SiNWs) were investigated by electron spin resonance (ESR) at 4.2 K. P doping was performed during the synthesis of SiNWs by laser ablation. Phosphorus doping into substitutional sites of crystalline Si in SiNWs w
## Abstract This paper describes the properties of silicon nanostructures synthesized by laser ablation. This is an extremely flexible technique allowing the fabrication of different kinds of nanostructures including porous films and Si nanocrystals embedded in Si oxide. Quantum confinement effects