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Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation

โœ Scribed by Fukata, N.; Chen, J.; Sekiguchi, T.; Okada, N.; Murakami, K.; Tsurui, T.; Ito, S.

Book ID
126870783
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
514 KB
Volume
89
Category
Article
ISSN
0003-6951

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Hydrogen passivation of P donors and def
Hydrogen passivation of P donors and defects in P-doped silicon nanowires synthesized by laser ablation
โœ N. Fukata; S. Matsushita; T. Tsurui; J. Chen; T. Sekiguchi; N. Uchida; K. Muraka ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 303 KB

Hydrogen passivation of phosphorus (P) donors and defects in P-doped silicon nanowires (SiNWs) were investigated by electron spin resonance (ESR) at 4.2 K. P doping was performed during the synthesis of SiNWs by laser ablation. Phosphorus doping into substitutional sites of crystalline Si in SiNWs w