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pH-ISFET with NMOS technology

✍ Scribed by S. Alegret; J. Bartrolí; C. Jiménez; M. del Valle; C. Domínguez; E. Cabruja; A. Merlos

Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
543 KB
Volume
3
Category
Article
ISSN
1040-0397

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✦ Synopsis

The construction of a pH-ISFET (ion-selective field effect transistor) fabricated with standard negativechannel MOS technology, compatible with complementary MOS technology, and using silicon nitride as a pH-sensitive material, is described. Its main analytical characteristics are discussed. The resulting calibration plot is linear over the pH range from 2 to 11, with a slope of 54 mV per pH unit.

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