Perspectives on emissivity measurements and modeling in silicon

✍ Scribed by S. Abedrabbo; J.C. Hensel; A.T. Fiory; B. Sopori; W. Chen; N.M. Ravindra

• Book ID: 104420732
• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 315 KB
• Volume: 1
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/s1369-8001(98)00028-6

✦ Synopsis

A spectral emissometer operating in the wavelength range of 1±20 mm and temperature range of 30±9008C has been utilized to simultaneously measure the re¯ectance, transmittance and emittance of silicon. Interesting dierences in the optical properties have been reported due to dierences in surface morphology. Quantitative results of the eects of rough side incidence versus smooth side on the optical properties of the same silicon wafer are analyzed in this study. This analysis is based on a standard one-parameter, multiple-re¯ection model as extended by Vandenabeele and Maex to include eects of a roughened surface. Their modi®cation essentially replaces the usual internal attenuation factor by an enhanced eective attenuation factor to take into account the eects of surface roughness. In the present study, it has been found that this very simple model gives a good account of the optical properties when radiation is incident on the smooth side of the wafer but fails for incidence for the roughside.