Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayer Electrodes and an MgO Barrier
β Scribed by Ji-Ho Park; Ikeda, S.; Yamamoto, H.; Gan, H.; Mizunuma, K.; Miura, K.; Hasegawa, H.; Hayakawa, J.; Ito, K.; Matsukura, F.; Ohno, H.
- Book ID
- 114653300
- Publisher
- IEEE
- Year
- 2009
- Tongue
- English
- Weight
- 243 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0018-9464
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π SIMILAR VOLUMES
## Abstract The influence of seedβbuffer layers on the texture and tunneling parameters was investigated. The spin valve magnetic tunnel junctions (SVβMTJs) were deposited onto thermally oxidized Si wafers by magnetron sputtering in the following sequence of layers: substrate Si(100)/SiO~2~ 47 nm/b
## Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a βFull Textβ option. The original article is trackable v