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Fabrication of Perpendicular MgO-Based Magnetic Tunnel Junctions With TbFe/FeCo Electrodes

✍ Scribed by Lin-Xiu Ye; Ching-Ming Lee; Jia-Mou Lee; Jia-Hua Lin; Jin-Zhen Liu; Jong-Ching Wu; Te-Ho Wu

Book ID
114654880
Publisher
IEEE
Year
2011
Tongue
English
Weight
401 KB
Volume
47
Category
Article
ISSN
0018-9464

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## Abstract The influence of seed‐buffer layers on the texture and tunneling parameters was investigated. The spin valve magnetic tunnel junctions (SV‐MTJs) were deposited onto thermally oxidized Si wafers by magnetron sputtering in the following sequence of layers: substrate Si(100)/SiO~2~ 47 nm/b