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Performance assessment of multijunction solar cells incorporating GaInNAsSb

✍ Scribed by Aho, Arto; Tukiainen, Antti; Polojärvi, Ville; Guina, Mircea


Book ID
121549600
Publisher
Springer-Verlag
Year
2014
Tongue
English
Weight
208 KB
Volume
9
Category
Article
ISSN
1931-7573

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Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AIGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 p~m h -~. Device quality GaAs and AlxGal\_xAs films were grown with p-type background carbon do