## Abstract We report the first microwave performance of single crystalline ZnO/ZnMgO heterostructure field‐effect transistors (HFETs). The structure consisted of a 15‐nm‐thick ZnO channel layer was grown by molecular beam epitaxy (MBE) on an __a__‐sapphire substrate. Two‐finger type HFETs with 1 o
Performance and optimization of dipole heterostructure field-effect transistor
✍ Scribed by Zou, J.; Dong, H.; Gopinath, A.; Shur, M.
- Book ID
- 114534472
- Publisher
- IEEE
- Year
- 1992
- Tongue
- English
- Weight
- 717 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0018-9383
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