Metal–insulator transition in two dimens
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V.M. Pudalov; G. Brunthaler; A. Prinz; G. Bauer
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Article
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1998
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Elsevier Science
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English
⚖ 162 KB
Studies of the temperature dependence of the conductivity on large number of Si-MOS samples with di erent disorder give evidence for the lack of a universal one-parameter scaling. We demonstrate that the 2D metallic state survives over a wide range of temperatures from 16 mK to 8 K, carrier densitie