Studies of the temperature dependence of the conductivity on large number of Si-MOS samples with di erent disorder give evidence for the lack of a universal one-parameter scaling. We demonstrate that the 2D metallic state survives over a wide range of temperatures from 16 mK to 8 K, carrier densitie
Critical properties of metal-insulator transition in low dimensions
✍ Scribed by Masatoshi Imada
- Publisher
- Springer US
- Year
- 1995
- Tongue
- English
- Weight
- 368 KB
- Volume
- 99
- Category
- Article
- ISSN
- 0022-2291
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