Metal–insulator transition in two dimensions

✍ Scribed by V.M. Pudalov; G. Brunthaler; A. Prinz; G. Bauer

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 162 KB
• Volume: 3
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(98)00221-5

✦ Synopsis

Studies of the temperature dependence of the conductivity on large number of Si-MOS samples with di erent disorder give evidence for the lack of a universal one-parameter scaling. We demonstrate that the 2D metallic state survives over a wide range of temperatures from 16 mK to 8 K, carrier densities from 0.7-35 × 10 11 cm -2 and conductances, G, from G 0:3-120 e 2 =h. We have revealed experimentally a weak logarithmic correction to the conductivity, which is of the delocalizing sign. We discuss a novel relationship between the partial scaling functions and the conductivity, which explains both, the exponential temperature dependence and the weak logarithmic corrections to the conductivity of the 2D strongly interacting system.