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PECVD growth of crystalline silicon from its tetrafluoride

โœ Scribed by P. Sennikov; D. Pryakhin; N. Abrosimov; B. Andreev; Yu. Drozdov; M. Drozdov; A. Kuznetsov; A. Murel; H.-J. Pohl; H. Riemann; V. Shashkin

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
243 KB
Volume
45
Category
Article
ISSN
0232-1300

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โœฆ Synopsis

Abstract

The process of plasma chemical deposition of silicon from inductively coupled plasma of the mixture of highโ€purity SiF~4~ and H~2~ sustained by RF discharge at 13.56 MHz in amount sufficient for subsequent growth of crystal by Czochralski method was investigated. The structure and impurity content of the produced layers as well as of the grown crystal have been studied (ยฉ 2010 WILEYโ€VCH Verlag GmbH & Co. KGaA, Weinheim)

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