PECVD growth of crystalline silicon from
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P. Sennikov; D. Pryakhin; N. Abrosimov; B. Andreev; Yu. Drozdov; M. Drozdov; A.
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Article
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2010
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John Wiley and Sons
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English
β 243 KB
## Abstract The process of plasma chemical deposition of silicon from inductively coupled plasma of the mixture of highβpurity SiF~4~ and H~2~ sustained by RF discharge at 13.56 MHz in amount sufficient for subsequent growth of crystal by Czochralski method was investigated. The structure and impur