PECVD grown silicon nitride AR coatings on polycrystalline silicon solar cells
โ Scribed by R. Kishore; S.N. Singh; B.K. Das
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 405 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0927-0248
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โฆ Synopsis
Silicon nitride films produced by plasma enhanced chemical vapor deposition (PECVD) have been studied as antireflection (AR) coating on polycrystalline silicon solar cells. A substantial enhancement (28%) in the short circuit current (Isc) has been obtained. The open circuit voltage (Voc) of these cells has also been found to improve after silicon nitride deposition. The deposition conditions to optimise the improvement in the cell performance have been discussed.
๐ SIMILAR VOLUMES
Silicon nitride (SiN) ยฎlms fabricated by remote plasma-enhanced chemical vapour deposition (RPECVD) have recently been shown to provide an excellent electronic passivation of silicon surfaces. This property, in combination with its large refractive index, makes RPECVD SiN an ideal candidate for a su