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PECVD grown silicon nitride AR coatings on polycrystalline silicon solar cells

โœ Scribed by R. Kishore; S.N. Singh; B.K. Das


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
405 KB
Volume
26
Category
Article
ISSN
0927-0248

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โœฆ Synopsis


Silicon nitride films produced by plasma enhanced chemical vapor deposition (PECVD) have been studied as antireflection (AR) coating on polycrystalline silicon solar cells. A substantial enhancement (28%) in the short circuit current (Isc) has been obtained. The open circuit voltage (Voc) of these cells has also been found to improve after silicon nitride deposition. The deposition conditions to optimise the improvement in the cell performance have been discussed.


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Silicon nitride (SiN) ยฎlms fabricated by remote plasma-enhanced chemical vapour deposition (RPECVD) have recently been shown to provide an excellent electronic passivation of silicon surfaces. This property, in combination with its large refractive index, makes RPECVD SiN an ideal candidate for a su