96/04026 Silicon nitride as an antireflection coating for polycrystalline silicon solar cells
- Publisher
- Elsevier Science
- Year
- 1996
- Weight
- 185 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0140-6701
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๐ SIMILAR VOLUMES
Experimental results showing dependence of short-circuit current density J~ on the thickness of an antireflection (AR) film are given for two types of textured polycrystalline silicon solar cells. Results which identify changes in Jsc caused by encapsulation are also given for different AR film thic
Silicon nitride films produced by plasma enhanced chemical vapor deposition (PECVD) have been studied as antireflection (AR) coating on polycrystalline silicon solar cells. A substantial enhancement (28%) in the short circuit current (Isc) has been obtained. The open circuit voltage (Voc) of these c
Silicon nitride (SiN) ยฎlms fabricated by remote plasma-enhanced chemical vapour deposition (RPECVD) have recently been shown to provide an excellent electronic passivation of silicon surfaces. This property, in combination with its large refractive index, makes RPECVD SiN an ideal candidate for a su