𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Peculiarities of vacancy-related defects formation in Si doped with tin

✍ Scribed by L.I. Khirunenko; O.O. Kobzar; Yu.V. Pomozov; M.G. Sosnin; M.O. Tripachko

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
233 KB
Volume
340-342
Category
Article
ISSN
0921-4526

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Mosaic Structure and Si Doping Related P
Mosaic Structure and Si Doping Related Peculiarities of Charge Carrier Transport in III–V Nitrides
✍ N.M. Shmidt; V.V. Emtsev; A.S. Kryzhanovsky; R.N. Kyutt; W.V. Lundin; D.S. Polos πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 226 KB πŸ‘ 2 views

a), V.V. Emtsev (a), A.S. Kryzhanovsky (a), R.N. Kyutt (a), W.V. Lundin (a), D.S. Poloskin (a), V.V. Ratnikov (a), A.V. Sakharov (a), A.N. Titkov (a), A.S. Usikov (a), and P. Girard (b)

Characterization of defects created in C
Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS
✍ Cloud Nyamhere; P.N.K. Deenapanray; F.D. Auret; F.C. Farlow πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 162 KB

We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defect