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IR studies of oxygen–vacancy defects in electron-irradiated Ge-doped Si

✍ Scribed by C.A. Londos; A. Andrianakis; D. Aliprantis; H. Ohyama; V.V. Emtsev; G.A. Oganesyan

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
202 KB
Volume
401-402
Category
Article
ISSN
0921-4526

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