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PE-CVD fabrication of germanium nanoclusters for memory applications

✍ Scribed by T. Dürkop; E. Bugiel; I. Costina; A. Ott; R. Peibst; K.R. Hofmann

Book ID
104063755
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
868 KB
Volume
147
Category
Article
ISSN
0921-5107

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A new method to fabricate Ge nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application was investigated in this study. The oxidation process nucleated the Ge nanocrystals embedded in the dielectric layer was clearly observed by transmission electron microscope analysis.