By using LT-GaAs as saturable absorber, we have demonstrated the stable Q-switched and mode-locked (QML) Nd:LuVO 4 laser run in a Z-type folded cavity. Nearly 100% modulation depth of mode locking can be obtained as long as the pump power reaches the oscillation threshold. The repetition rate of the
โฆ LIBER โฆ
Passively mode-locked Nd:LuVO_4 laser with a GaAs wafer
โ Scribed by Yu, Haohai; Zhang, Huaijin; Wang, Zhengping; Wang, Jiyang; Yu, Yonggui; Jiang, Minhua; Tang, Dingyuan; Xie, Guoqiang; Luo, Hang
- Book ID
- 115430405
- Publisher
- Optical Society of America
- Year
- 2008
- Tongue
- English
- Weight
- 290 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0146-9592
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We report on a compact high-power passively modelocked Nd:LuVO4 laser by use of semiconductor saturable absorber mirror (SESAM). The laser generated clean CW modelocked pulses with an average output power of 8.6 W, a repetition rate of 144 MHz, and a pulse duration of 13.2 ps. By employing a three-m
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