Particle swarm optimization in the determination of the optimal bias current for noise performance of gallium nitride HEMTs

✍ Scribed by Tyler Ross; Gabriel Cormier; Khelifa Hettak; Rony E. Amaya

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 341 KB
• Volume: 53
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.25758

✦ Synopsis

Abstract

Gallium nitride has attracted a great deal of interest in recent years due to its power handling ability. In addition, its noise performance is known to be good. In this letter, we present a method for determining the bias current density needed to obtain optimal noise figure for gallium nitride high‐electron mobility transistors (HEMTs). Particle swarm optimization is used to fit transistor S parameters to a model, enabling the calculation of the transistor's two‐port noise parameters. This process is performed for different bias points for different‐sized transistors, leading to the conclusion that a current density of 0.3 mA/μm yields the best minimum noise figure. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:652–656, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25758