particle, and electron beams in hafnium dioxide films
✍ Scribed by Behar, Moni; Fadanelli, Raul C.; Abril, Isabel; Garcia-Molina, Rafael; Denton, Cristian D.; Nagamine, Luiz C. C. M.; Arista, Néstor R.
- Book ID
- 120000289
- Publisher
- The American Physical Society
- Year
- 2009
- Tongue
- English
- Weight
- 333 KB
- Volume
- 80
- Category
- Article
- ISSN
- 1050-2947
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## Abstract HfO~2~ films were grown by atomic layer deposition (ALD) from a new liquid precursor, Hf(ONEt~2~)~4~ and H~2~O, at temperatures between 250 °C and 350 °C on borosilicate glass and Si(100) substrates. The highest growth rate was achieved at 300 °C, whereas the growth was essentially slow
Electron beam evaporation was employed to deposit hafnium on silicon (100) substrate, followed by a rapid thermal oxidation process to fabricate hafnium dioxide thin film. Hafnium was transformed to hafnium oxide above a oxidizing temperature of 500 8C. An interfacial layer of hafnium silicate was o