InGaN based light emitting diodes with G
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Li, X. ;Liu, H. Y. ;Liu, S. ;Ni, X. ;Wu, M. ;Avrutin, V. ;Izyumskaya, N. ;รzgรผr,
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Article
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2010
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John Wiley and Sons
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English
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## Abstract We report on the electrical and optical properties of InGaN based light emitting diodes (LEDs) utilizing Ga doped ZnO (GZO) grown by molecular beam epitaxy (MBE) as a highly transparent contact pโelectrode (GZOโLEDs). For comparison, the LEDs with semiโtransparent thin Ni/Au (5/5โnm) cu