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Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes

โœ Scribed by Wang, Liancheng; Zhang, Yiyun; Li, Xiao; Liu, Zhiqiang; Guo, Enqing; Yi, Xiaoyan; Wang, Junxi; Zhu, Hongwei; Wang, Guohong


Book ID
121722131
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
1024 KB
Volume
101
Category
Article
ISSN
0003-6951

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## Abstract We report on the electrical and optical properties of InGaN based light emitting diodes (LEDs) utilizing Ga doped ZnO (GZO) grown by molecular beam epitaxy (MBE) as a highly transparent contact pโ€electrode (GZOโ€LEDs). For comparison, the LEDs with semiโ€transparent thin Ni/Au (5/5โ€‰nm) cu