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Parameter-extraction method for heterojunction bipolar transistors

✍ Scribed by Maas, S.A.; Tait, D.


Book ID
118049105
Publisher
IEEE
Year
1992
Tongue
English
Weight
158 KB
Volume
2
Category
Article
ISSN
1051-8207

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A simple and efficient way of extracting the small-signal model parameters of the heterojunction bipolar transistor (HBT) is proposed. This novel approach provides a new insight into the strong correlation between the extrinsic and intrinsic HBT model parameters and raises the optimization efficienc

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