Parameter-extraction method for heterojunction bipolar transistors
β Scribed by Maas, S.A.; Tait, D.
- Book ID
- 118049105
- Publisher
- IEEE
- Year
- 1992
- Tongue
- English
- Weight
- 158 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1051-8207
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
A simple and efficient way of extracting the small-signal model parameters of the heterojunction bipolar transistor (HBT) is proposed. This novel approach provides a new insight into the strong correlation between the extrinsic and intrinsic HBT model parameters and raises the optimization efficienc
## Abstract By deriving new __Z__βparameter equations, accurate extraction is performed to determine all baseβcollector model parameters in a SiGe heterojunction bipolar transistor (HBT) equivalent circuit directly from measured __S__ parameters, without any test structure and geometric calculation