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GaAsSb for heterojunction bipolar transistors

✍ Scribed by Ikossi-Anastasiou, K.

Book ID
114535106
Publisher
IEEE
Year
1993
Tongue
English
Weight
892 KB
Volume
40
Category
Article
ISSN
0018-9383

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## Abstract GaAsSb is an important III–V semiconductor ternary alloy which is currently used as the thin base layer in high speed InP Heterojunction Bipolar Transistors (HBT). Up to now, very little is known about physical properties of GaAsSb alloys, such as surface Fermi level pinning and Schottk