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Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors

✍ Scribed by Ng, C. W. ;Wang, H.


Book ID
112180981
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
409 KB
Volume
209
Category
Article
ISSN
0031-8965

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