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Pair diffusion and kick-out: Contributions to diffusion of boron in silicon

✍ Scribed by M. Y. L. Jung; R. Gunawan; R. D. Braatz; E. G. Seebauer

Publisher
American Institute of Chemical Engineers
Year
2004
Tongue
English
Weight
135 KB
Volume
50
Category
Article
ISSN
0001-1541

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## Abstract Technologies such as solid‐phase epitaxial regrowth and millisecond annealing techniques have led to a wide range of maximum temperatures and heating rates for activating dopants and eliminating ion implantation damage for transistor junction formation. Developing suitable annealing str