p-Type ZnO Layer Formation by Excimer Laser Doping

✍ Scribed by T. Aoki; Y. Shimizu; A. Miyake; A. Nakamura; Y. Nakanishi; Y. Hatanaka

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 72 KB
• Volume: 229
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200201)229:2<911::aid-pssb911>3.0.co;2-r

✦ Synopsis

Subject classification: 85.40.Ry; S10.1 A p-type ZnO layer was fabricated by excimer laser doping technique using thermally oxidized ZnO films. Epitaxial ZnO(0001) films were formed by thermal oxidation of epitaxial ZnSe films on Si(111) substrate grown by remote plasma enhanced metal-organic chemical vapor deposition. The p-type ZnO was fabricated by excimer laser irradiation with Sb as a dopant source. A good Ohmic contact was obtained between Sb doped ZnO layer and gold metal electrodes. The Sb doped ZnO layer showed positive Hall coefficient, the resistivity was 8 Â 10 --3 W cm with a hole mobility of 1.5 cm 2 /Vs and an acceptor concentration of 5 Â 10 20 cm --3 as p-type, respectively.