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p-type conducting ZnO:P microwires prepared by direct carbothermal growth

✍ Scribed by B. Q. Cao; M. Lorenz; M. Brandt; H. von Wenckstern; J. Lenzner; G. Biehne; M. Grundmann

Book ID
112182638
Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
393 KB
Volume
2
Category
Article
ISSN
1862-6254

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## Abstract N‐doped p‐type ZnO thin films were grown by plasma molecular beam epitaxy (P‐MBE) on __c__‐plane sapphire (Al~2~O~3~) using radical NO as oxygen source and nitrogen dopant. The reproducible ZnO thin films have maximum net hole concentration (__N__~A~ – __N__~D~) of 1.2 Γ— 10^18^ cm^–3^ a