𝔖 Bobbio Scriptorium
✦   LIBER   ✦

p-type behavior in nominally undoped ZnO thin films by oxygen plasma growth

✍ Scribed by Zeng, Y. J.; Ye, Z. Z.; Xu, W. Z.; Lu, J. G.; He, H. P.; Zhu, L. P.; Zhao, B. H.; Che, Y.; Zhang, S. B.

Book ID
120297988
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
347 KB
Volume
88
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Growth of phosphorus-doped p-type ZnO th
Growth of phosphorus-doped p-type ZnO thin films by MOCVD
✍ Ye, Zhizhen ;Wang, Jingrui ;Wu, Yazhen ;Zhou, Xincui ;Chen, Fugang ;Xu, Weizhong πŸ“‚ Article πŸ“… 2008 πŸ› Higher Education Press and Springer 🌐 English βš– 130 KB
P-type ZnO thin films prepared by plasma
P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO
✍ Liang, H. W. ;Lu, Y. M. ;Shen, D. Z. ;Liu, Y. C. ;Yan, J. F. ;Shan, C. X. ;Li, B πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 123 KB

## Abstract N‐doped p‐type ZnO thin films were grown by plasma molecular beam epitaxy (P‐MBE) on __c__‐plane sapphire (Al~2~O~3~) using radical NO as oxygen source and nitrogen dopant. The reproducible ZnO thin films have maximum net hole concentration (__N__~A~ – __N__~D~) of 1.2 Γ— 10^18^ cm^–3^ a