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P-related defects in P-doped a-Si:H

✍ Scribed by N. Ishii; M. Kumeda; T. Shimizu


Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
342 KB
Volume
53
Category
Article
ISSN
0038-1098

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Oxygen related defects in germanium
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Spectroscopic investigations during the last decade have resulted in a detailed picture of oxygen related defects in germanium such as oxygen interstitials and thermal donors. The results are summarized and compared with those of equivalent centres in silicon. The many similarities suggest that unif