SiGe-on-insulator material fabrication b
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Miao Zhang; Zhenghua An; Chenglu Lin; Paul K. Chu
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Article
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2004
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Elsevier Science
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English
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Relaxed SiGe-on-insulator (SGOI) is an attractive material to fabricate strained Si structures. Separation-by-implantation-of-oxygen (SIMOX) is a competing method to synthesize SGOI materials. In this work, pseudomorphic SiGe grown directly on Si substrate without any buffer layer SiGe/Si were impla