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Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire

โœ Scribed by Choopun, S.; Vispute, R. D.; Noch, W.; Balsamo, A.; Sharma, R. P.; Venkatesan, T.; Iliadis, A.; Look, D. C.


Book ID
125841957
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
517 KB
Volume
75
Category
Article
ISSN
0003-6951

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Zinc oxide (ZnO) thin films on Si (1 1 1) substrates were deposited by pulsed laser ablation of ZnO target at different oxygen pressures. A pulsed Nd:YAG laser with wavelength of 1064 nm was used as laser source. The deposited thin films have been characterized by X-ray diffraction (XRD), Atomic for