First results of AlGaN/GaN HEMTs on sapp
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M. Werquin; N. Vellas; Y. Guhel; D. Ducatteau; B. Boudart; J. C. Pesant; Z. Boug
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Article
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2005
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John Wiley and Sons
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English
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AlGaN/GaN HEMTs are realized on a sapphire substrate without a field plate for power applications at microwave frequencies using a new Ar ฯฉ ions implant-isolation technology. The first results obtained are very good in terms of device isolation.