๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

โœ Scribed by Shiu, Jin-Yu; Huang, Jui-Chien; Desmaris, Vincent; Chang, Chia-Ta; Lu, Chung-Yu; Kumakura, Kazuhide; Makimoto, Toshiki; Zirath, Herbert; Rorsman, Niklas; Chang, Edward Yi


Book ID
120527759
Publisher
IEEE
Year
2007
Tongue
English
Weight
123 KB
Volume
28
Category
Article
ISSN
0741-3106

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


First results of AlGaN/GaN HEMTs on sapp
โœ M. Werquin; N. Vellas; Y. Guhel; D. Ducatteau; B. Boudart; J. C. Pesant; Z. Boug ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 226 KB

AlGaN/GaN HEMTs are realized on a sapphire substrate without a field plate for power applications at microwave frequencies using a new Ar ฯฉ ions implant-isolation technology. The first results obtained are very good in terms of device isolation.