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Oxygen ion implantation into both heavily doped n+- and p+-GaAs for isolation

✍ Scribed by Yamazaki Hajime; Ishida Satoru; Nagano Jin; Watanabe Kazuo; Ito Hiroshi


Book ID
113281979
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
364 KB
Volume
59-60
Category
Article
ISSN
0168-583X

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