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Proton Implantation Induced Damage to Heavily Doped n-GaAs as Envisaged by Charge Deep-Level Transient Spectroscopy

✍ Scribed by Thurzo, I. ;Pincík, E. ;Cicmanec, P.


Book ID
101376436
Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
262 KB
Volume
162
Category
Article
ISSN
0031-8965

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