Oxygen in sputter-deposited ZnTe thin films

✍ Scribed by S. Merita; T. Krämer; B. Mogwitz; B. Franz; A. Polity; B. K. Meyer

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 435 KB
• Volume: 3
• Category: Article
• ISSN: 1862-6351
• DOI: 10.1002/pssc.200564637

✦ Synopsis

Abstract

Bandgap‐bowing has been observed in many of the zinc‐group‐VI compounds, when the anion is substituted with an isovalent element. Recently new results on the ZnO~1–x~S~x~ and ZnO~1–x~Se~x~ system have been presented, but so far only one report on ZnO~1–x~Te~x~ is known. We examine the possibility of substituting tellurium by oxygen in sputter‐deposited polycrystalline ZnTe thin‐films and the effects on bandgap energy and crystal structure. A first approximation of the bowing curve with a lower limit of the bowing parameter of 2.7 eV is performed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)