Oxidation through the zirconia substrates of heteroepitaxial silicon films Grown on yttria-stabilized cubic zirconia
โ Scribed by I. Golecki; R. L. Maddox; H. L. Glass; A. L. Lin; T. J. Raab; H. M. Manasevit
- Book ID
- 111866949
- Publisher
- Springer US
- Year
- 1985
- Tongue
- English
- Weight
- 808 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0361-5235
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๐ SIMILAR VOLUMES
## Abstract We report on the growth of semipolar InN ($11\overline {2} l$) films on yttria stabilized zirconia (YSZ) substrates by pulsed laser deposition. We found that the growth orientation can be precisely controlled by utilizing the tendency for the epitaxial relationships of InN [0001] || YSZ
Layers of yttria-stabilized zirconia with different yttria content were prepared using MOCVD. The variation of the crystallographic parameters of the cell, as well as the residual stress of the deposits have been studied by XRD as a function of yttria content. The maximum value of the stress has bee