𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Oxidation of SiC investigated by ellipsometry and Rutherford backscattering spectrometry

✍ Scribed by Szilagyi, E.; Petrik, P.; Lohner, T.; Koos, A. A.; Fried, M.; Battistig, G.

Book ID
118141770
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
388 KB
Volume
104
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Rutherford backscattering spectrometry c
Rutherford backscattering spectrometry channeling study of ion-irradiated 6H-SiC
✍ Jiang, W.; Weber, W. J.; Thevuthasan, S.; McCready, D. E. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 158 KB πŸ‘ 2 views

Single-crystal 6H-SiC (a-SiC) wafers were irradiated with He', C' and Si' ions to Γ‘uences ranging from 7.5 Γ‚ 1017 to 1 Γ‚ 1020 ions m-2 at various temperatures (160-870 K). Damage accumulation and subsequent defect annealing (up to 1170 K) have been studied using in situ 2.0 MeV He' Rutherford backsc