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Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

✍ Scribed by Arthur Useinov; Oleg Mryasov; Jürgen Kosel

Book ID
113725433
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
390 KB
Volume
324
Category
Article
ISSN
0304-8853

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## Abstract Double‐barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ