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Effects of applied bias voltage in tunnel junctions with ferroelectric barrier

✍ Scribed by L.B. Zhang; M.H. Tang; J.C. Li; Y.G. Xiao


Book ID
113916070
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
449 KB
Volume
68
Category
Article
ISSN
0038-1101

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## Abstract Double‐barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ