Prediction of large bias-dependent magnetoresistance in all-oxide magnetic tunnel junctions with a ferroelectric barrier
β Scribed by Caffrey, Nuala M.; Archer, Thomas; Rungger, Ivan; Sanvito, Stefano
- Book ID
- 121220238
- Publisher
- The American Physical Society
- Year
- 2011
- Tongue
- English
- Weight
- 430 KB
- Volume
- 83
- Category
- Article
- ISSN
- 1098-0121
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
By considering the excitation of the spin wave at the interface between magnetic electrodes and insulating barrier and 3r2 Ε½ . taking the mean-field approximation to the s-d exchange interaction, a T law is derived for the temperature T dependence of the exchange field in ferromagnets. Then we have
## Abstract We have investigated the composition dependence of magnetic tunnel junctions (MTJs) with Nbβalloyed Alβoxide (NbAlO~x~) and analyzed the microstructure changes and electrical property of Nb alloyed Alβoxide layer. After annealing, tunnel magnetoresistance (TMR) ratio of MTJ with Nbβallo