## Abstract We have investigated the composition dependence of magnetic tunnel junctions (MTJs) with Nb‐alloyed Al‐oxide (NbAlO~x~) and analyzed the microstructure changes and electrical property of Nb alloyed Al‐oxide layer. After annealing, tunnel magnetoresistance (TMR) ratio of MTJ with Nb‐allo
✦ LIBER ✦
Influence of insulating barrier thickness on the magnetoresistance properties of a magnetic tunnel junction with Zr-alloyed Al oxide barrier
✍ Scribed by Choi, Chul-Min ;Lee, Seong-Rae
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 91 KB
- Volume
- 201
- Category
- Article
- ISSN
- 0031-8965
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## Abstract The influence of seed‐buffer layers on the texture and tunneling parameters was investigated. The spin valve magnetic tunnel junctions (SV‐MTJs) were deposited onto thermally oxidized Si wafers by magnetron sputtering in the following sequence of layers: substrate Si(100)/SiO~2~ 47 nm/b