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Bias Voltage Dependence of Magnetic Tunnel Junctions Comprising Double Barriers and CoFe/NiFeSiB/CoFe Free Layer

✍ Scribed by You Song Kim; Byong Sun Chun; Deok-kee Kim; Jae Yeon Hwang; Soon Sub Kim; Rhee, J.R.; Keewon Kim; Taewan Kim; Young Keun Kim


Book ID
114651461
Publisher
IEEE
Year
2006
Tongue
English
Weight
596 KB
Volume
42
Category
Article
ISSN
0018-9464

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Bias voltage dependence of magnetic tunn
✍ Yim, H. I. ;Lee, S. Y. ;Hwang, J. Y. ;Rhee, J. R. ;Chun, B. S. ;Wang, K. L. ;Kim πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 288 KB

## Abstract Double‐barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ