Bias voltage dependence of magnetic tunn
β
Yim, H. I. ;Lee, S. Y. ;Hwang, J. Y. ;Rhee, J. R. ;Chun, B. S. ;Wang, K. L. ;Kim
π
Article
π
2008
π
John Wiley and Sons
π
English
β 288 KB
## Abstract Doubleβbarrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ