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Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs

✍ Scribed by Zhang, Cher Xuan; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Dhar, Sarit; Ryu, Sei-Hyung; Shen, Xiao; Pantelides, Sokrates T.

Book ID
124089896
Publisher
IEEE
Year
2013
Tongue
English
Weight
502 KB
Volume
34
Category
Article
ISSN
0741-3106

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## Abstract The electrical and low frequency noise properties of 4H‐SiC p^+^–n–n^+^ junctions have been investigated at different temperatures. The forward current–voltage characteristics are described as the sum of a recombination current originating from carrier recombination on the sidewall of t